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Direct synthesis of InAs quantum dots in single-crystalline GaAs matrix by molecular beam epitaxy

✍ Scribed by O. Brandt; L. Tapfer; K. Ploog; R. Bierwolf; F. Phillipp; M. Hohenstein


Book ID
118365499
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
1017 KB
Volume
267
Category
Article
ISSN
0039-6028

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Antimony incorporation in InAs quantum d
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We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo