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Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy

✍ Scribed by Katkov, A. V.; Wang, C. C.; Chi, J. Y.; Cheng, C.; Gutakovskii, A. K.


Book ID
121733642
Publisher
AVS (American Vacuum Society)
Year
2011
Tongue
English
Weight
750 KB
Volume
29
Category
Article
ISSN
1520-8567

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We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo