𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Direct observation of an increase in buckled dimers on Si(001) at low temperature

✍ Scribed by Wolkow, Robert A.

Book ID
117996572
Publisher
The American Physical Society
Year
1992
Tongue
English
Weight
662 KB
Volume
68
Category
Article
ISSN
0031-9007

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

In situ UHV-TEM observation of the direc
In situ UHV-TEM observation of the direct formation of Pd2Si islands on Si(111) surfaces at high temperature
✍ Masaki Takeguchi; Yuan Wu; Miyoko Tanaka; Kazuo Furuya πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 498 KB

Pd was deposited on clean Si surfaces at about 680 K in an ultrahigh-vacuum transmission electron microscope. The Ε½ . direct formation process of Pd Si islands on Si 111 surfaces was observed in situ by high-resolution transmission electron 2 Ε½ . microscopy in a cross-sectional view. At a low deposi

Analytical calculation of effective dens
Analytical calculation of effective densities of states, intrinsic carrier concentration and ionized doping concentration in strained Si1βˆ’xGex alloys on (001) Si substrates at room and low temperatures
✍ Zhang Wan-rong; Zeng Zheng; Luo Jin-sheng πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 476 KB

In this paper, the effective densities of states for the conduction and valence bands, Nc and N,, the intrinsic carrier concentration ni and the ionized doping concentration in strained Si,\_,Ge, layers grown on (001) Si substrates are analytically calculated, and their temperature and Ge fraction d