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Direct epitaxial growth of semiconducting β-FeSi[sub 2] thin films on Si(111) by facing targets direct-current sputtering

✍ Scribed by Yoshitake, T.; Inokuchi, Y.; Yuri, A.; Nagayama, K.

Book ID
121757478
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
596 KB
Volume
88
Category
Article
ISSN
0003-6951

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✍ Pan, S. S. ;Ye, C. ;Teng, X. M. ;Fan, H. T. ;Li, G. H. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 234 KB

## Abstract Single‐phase β‐ and α‐FeSi~2~ thin films can be grown on Si(100) with and without a thin Fe buffer layer by adopting a facing target radio‐frequency magnetron sputtering method. The role of the buffer layer on the formation of β‐ and α‐FeSi~2~ thin film was discussed. The composition of