Diode-pumped passively Q-switched Nd:GGG crystal with GaAs saturable absorber
β Scribed by L. J. Qin; D. Y. Tang; G. Q. Xie; H. Luo; C. M. Dong; Z. T. Jia; X. T. Tao
- Book ID
- 110207973
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 133 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1054-660X
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A laser-diode-pumped passively Q-switched new type crystal Nd 3+ :NaY(WO4)2 (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for di erent output coupler re ectivities
A xenon ash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9:45 J. The dynamic laser has the highest slope e ciency when the GaAs wafer is