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Diode End-Pumped Passively Q-Switched Nd3+:GdVO4 Self-Raman Laser at 1176 nm

✍ Scribed by Bao-Shan, Wang; Ji-Ying, Peng; Jie-Guang, Miao; Yi-Min, Li; Er-Juan, Hao; Zhe, Zhang; Lan-Lan, Gao; Hui-Ming, Tan

Book ID
115457659
Publisher
Institute of Physics
Year
2007
Tongue
English
Weight
235 KB
Volume
24
Category
Article
ISSN
0256-307X

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Passively Q-switched diode-pumped Cr4+:Y
Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser
✍ Sebastien Forget; Frederic Druon; FranΓ§ois Balembois; Patrick Georges; Nicolas L πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 166 KB

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO 4 crystal and a Cr 4+ :YAG saturable absorber. T