The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO 4 crystal and a Cr 4+ :YAG saturable absorber. T
Analysis of a diode-pumped passively Q-switched Nd:GdVO4 self-stimulating Raman laser
β Scribed by Fufang Su; Xingyu Zhang; Qingpu Wang; Fuquan Wu; Shutao Li; Xiaolei Zhang; Zhenhua Cong
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 139 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0925-3467
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π SIMILAR VOLUMES
An efficient compact self-Raman frequency conversion in an end-diode-pumped actively Q-switched c-cut Nd:YVO 4 laser has been demonstrated. At an incident pump power of 5.0 W, the self-stimulated Raman laser produces 910 mW of 1178 nm average output power at a pulse repetition frequency of 20 kHz. D
We demonstrate a diode-pumped passively Q-switched and mode-locking intracavity frequency-doubled Nd:GdVO~4~/KTP green laser with a Cr^4+^:YAG saturable absorber. Nearly 95% modulation depth for the mode-locked pulses inside the Q-switched envelope has been obtained. The Q-switched envelope pulses w