๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Digital Baseband Predistortion Based Linearized Broadband Inverse Class-E Power Amplifier

โœ Scribed by Thian, M.; Ming Xiao; Gardner, P.


Book ID
114660964
Publisher
IEEE
Year
2009
Tongue
English
Weight
732 KB
Volume
57
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


An open-loop digital predistorter based
โœ Yuelin Ma; Songbai He; Yoshihiko Akaiwa; Yasushi Yamao ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 593 KB

Digital Predistorter is a cost-effective solution to compensate for the nonlinear distortions appearing in the RF power amplifiers (PAs). The indirect learning scheme is widely implemented because of its flexibility to eliminate the requirement for building a closed-loop real time system, which dram

Synergistic digital predistorter based o
โœ Jangheon Kim; Junghwan Moon; Ildu Kim; Jungjoon Kim; Bumman Kim ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 432 KB

## Abstract We investigate on linearization performance of a digital predistortion (DPD) linearization technique based on the low memory power amplifier (PA) for wideband signals. The low memory PA is implemented using a 90W PEP LDMOSFET at 2.14 GHz, and an envelope short matching topology is appli

Drain-voltage dependency of memory effec
โœ Takeshi Takano; Yasuyuki Oishi; Toru Maniwa; Hiroyuki Hayashi; Toshihide Kikkawa ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 470 KB

With regard to wideband predistortion type power amplifiers, such as shared amplifiers used in W-CDMA base stations, the memory effects associated with RF power amplifiers degrade power efficiency. Aiming to solve this problem, we find that a high-voltage compound semiconductor device has sufficient