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Diffusion parameters of indium for silicon process modeling

โœ Scribed by Kizilyalli, I. C.; Rich, T. L.; Stevie, F. A.; Rafferty, C. S.

Book ID
111905175
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
317 KB
Volume
80
Category
Article
ISSN
0021-8979

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A set of' muttiullv conrpatible torsional, stretch, and bending parunieters have been devised that reproduce with considerable acc1uac.v the calculated structures of'siniple silerres and disilenes, and the crystal structure data ui~ailuble for solid silenes and disilenes.