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Diffusion of Silicon and Phosphorus into Germanium as Studied by Secondary Ion Mass Spectrometry

✍ Scribed by Södervall, U.; Friesel, M.

Book ID
120809562
Publisher
Trans Tech Publications, Ltd.
Year
1997
Tongue
English
Weight
413 KB
Volume
143-147
Category
Article
ISSN
1662-9507

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Lithium ions with dosages of 2.6 Â 10 12 , 2.6 Â 10 13 , 2.6 Â 10 14 , and 2.6 Â 10 15 cm À2 have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass