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Impurity diffusion of Al in Ni single crystals studied by secondary ion mass spectrometry (SIMS)

✍ Scribed by Gust, W. ;Hintz, M. B. ;Loddwg, A. ;Odelius, H. ;Predel, B.


Book ID
105375240
Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
512 KB
Volume
64
Category
Article
ISSN
0031-8965

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Diffusion behavior of implanted Li ions
✍ F. Salman; L. Chow; B. Chai; F.A. Stevie πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 210 KB

Lithium ions with dosages of 2.6 Γ‚ 10 12 , 2.6 Γ‚ 10 13 , 2.6 Γ‚ 10 14 , and 2.6 Γ‚ 10 15 cm Γ€2 have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass