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Diffusion of group I impurities in epitaxial layers of AlAs–GaAs solid solutions

✍ Scribed by Dzhafarov, T. D. ;Demakov, Yu. P.


Book ID
105371668
Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
352 KB
Volume
36
Category
Article
ISSN
0031-8965

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Preparation and Investigation of Epitaxi
✍ Dr. Zh. I. Alferov; V. M. Andreyev; V. I. Korol'Kov; E. L. Portnoi 📂 Article 📅 1969 🏛 John Wiley and Sons 🌐 English ⚖ 554 KB

Single crystal epitaxial layers of A1,Gal -,As solid solutions and GaAs-Al,Gal -,As heterojunctions were obtained on gallium arsenide substrates by crystallization from a solution of arsenic in a gallium-aluminium melt,. Multilayer structures of the type p(n)GaAs-p(n)Al,~Gal-,,As-p(n)Al,,Gal-., As-n