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Diffusion of antimony in epitaxial silicon obtained by sublimation in a vacuum

✍ Scribed by V. A. Uskov; S. P. Svetlov


Book ID
112427550
Publisher
Springer
Year
1972
Tongue
English
Weight
193 KB
Volume
15
Category
Article
ISSN
1573-9228

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Epitaxial growth of silicon carbide laye
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The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi