✦ LIBER ✦

Diffusion model for high-temperature off-state currents in SOI MOSFETs

✍ Scribed by T.E. Rudenko; V.I. Kilchitskaya; A.N. Rudenko

Book ID: 104306454
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 281 KB
Volume: 36
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(97)00081-6

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✦ Synopsis

In this paper off-state drain currents in long-channel inversion mode SOI MOSFETs are investigated in the range 50-320°C by measurements and simulations. The behavior of high-temperature (T>200°C) off-state currents is interpreted in terms of diffusion model, based on the analysis of carrier distribution in a SO1 film in off-state of the device. The back-gate biasing and the silicon film thinning effects on high-temperature off-state currents are analyzed.

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