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Diffusion-limited hydrogen evolution and the density of dangling bonds in high-temperature-annealed hydrogenated amorphous silicon

✍ Scribed by Jiang-Huai Zhou; Minoru Kumeda; Tatsuo Shimizu


Book ID
115990719
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
525 KB
Volume
195
Category
Article
ISSN
0022-3093

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## Abstract We have investigated the distribution of H atoms around native dangling bonds in a‐Si:H by electron‐nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B **47**(12), 7013–7024 (1993)] we find that the