✦ LIBER ✦

Diffusion length measurements on plasma-sprayed polycrystalline silicon substrates and on silicon grown on them by chemical vapour deposition

✍ Scribed by M. Akani; J.E. Bouree; R. Suryanarayanan; M. Rodot; G. Brun; M. Caymax

Publisher: Elsevier Science
Year: 1987
Weight: 277 KB
Volume: 22
Category: Article
ISSN: 0379-6787
DOI: 10.1016/0379-6787(87)90049-4

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✦ Synopsis

The plasma spray technique was used to obtain p-type polycrystalline silicon deposits 200 #m -2 mm thick and of area 1 cm 2. Silicon layers 50 #m thick were grown on these deposits by chemical vapour deposition. The electronic diffusion length of plasma-sprayed silicon was found to be in the range 9-16 pm whereas it increased to 28 pm in the layer grown by chemical vapour deposition.

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