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Diffusion barrier performance of Zr–N/Zr bilayered film in Cu/Si contact system

✍ Scribed by Ying Wang; Fei Cao; Ming-hui Ding; Yun-tao Liu


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
412 KB
Volume
48
Category
Article
ISSN
0026-2714

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An amorphous Ta-Zr binary alloy diffusion barrier was studied in the Cu metallization. A Cu/Ta 50 Zr 50 /SiO 2 /Si stack with 50 nm thick amorphous film was prepared by co-sputtering can effectively suppress the penetration of Cu atoms into substrate upon annealing up to 650 °C. Examining the therma