✦ LIBER ✦

Difference between the (001) facet and the vicinal planes in vapour phase epitaxial growth of GaAs

✍ Scribed by L. Hollan; C. Schiller

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 998 KB
Volume: 22
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(74)90091-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaAs growth by vapour phase transport: I

GaAs growth by vapour phase transport: II. Interpretation of the growth of the {001} faces by the adsorption of gallium monochloride and arsenic molecules

✍ R. Cadoret; L. Hollan; J.B. Loyau; M. Oberlin; A. Oberlin 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 606 KB

Multistep formation and lateral variatio

Multistep formation and lateral variation in the In composition in InGaAs layers grown by metalorganic vapor phase epitaxy on (001) vicinal GaAs substrates

✍ K. Hiramoto; T. Tsuchiya; M. Sagawa; K. Uomi 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 573 KB

Computed Growth Rates of (001) GaN Subst

Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method

✍ Cadoret, R. ;Trassoudaine, A. ;Aujol, E. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 84 KB 👁 1 views

A theoretical model developed to account for the (001) GaN growth by hydride vapour phase epitaxy in H 2 or neutral carrier gases is applied to investigate the variation of the growth rate with the temperature and input partial pressure of GaCl. The curves computed by taking into account the mass tr

The rotation of the alignment by 90° of

The rotation of the alignment by 90° of (H(CAs)2) complexes resulting from metalorganic molecular beam epitaxy or metalorganic vapour phase epitaxy growth on GaAs(001) using trimethylgallium

✍ B.R. Davidson; R.C. Newman; T. Kaneko; O. Naji; K.H. Bachem 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 422 KB

In situ control of the growth of GaAs /

In situ control of the growth of GaAs / GaAlAs structures in a metalorganic vapour phase epitaxy reactor by laser reflectometry

✍ R. Azoulay; Y. Raffle; R. Kuszelewicz; G. Le Roux; L. Dugrand; J.C. Michel 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 542 KB

Influence of the growth parameters in Ga

Influence of the growth parameters in GaAs vapour phase epitaxy: J. M. Durand. Philips J. Res., 34, (5/6) 177 (1979)

📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 116 KB