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Dielectric properties of anodic films on sputter-deposited Ti–Si porous columnar films

✍ Scribed by M. Tauseef Tanvir; T. Fujii; Y. Aoki; K. Fushimi; H. Habazaki

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
658 KB
Volume
257
Category
Article
ISSN
0169-4332

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Aluminum nitride (AlN) thin films have been deposited on Si(1 1 1) substrates by using reactive-rf-magnetron-sputtering at 250 °C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c-or a-axis orientation. The