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Dielectric properties of AlN films prepared by laser-induced chemical vapour deposition

✍ Scribed by X. Li; T.L. Tansley; V.W.L. Chin


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
387 KB
Volume
250
Category
Article
ISSN
0040-6090

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Perhydridosilicone films produced by IR
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Solid perhydridosilicone films have been produced by transversely excited atmospheric (TEA) and continuous-wave CO 2 laser-induced gas-phase decompositions of H 3 SiOSiH 3 controlled by elimination and polymerization of transient silanone H 2 Si=O and affording silane and hydrogen as side products.