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Dielectric properties and I-V characteristics of (Pb0.4Sr0.6)TiO3thin films improved by TiO2buffer layers

โœ Scribed by Lili Chen; Mingrong Shen; Liang Fang; Yu Xu

Publisher
Springer
Year
2007
Tongue
English
Weight
493 KB
Volume
42
Category
Article
ISSN
0928-0707

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An alkoxide-based sol-gel method was used to fabricate Ba Sr TiO thin films doped by Bi from 5 to 20 0.6 0.4 3 mol% on a Pt / Ti / SiO / Si substrate. The structural and dielectric properties of BST thin films were investigated 2 as a function of Bi dopant concentration. The dielectric properties of