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Diagnostics of γ-irradiated Si-SiO2structures by the cathodoluminescence method

✍ Scribed by Baraban, A. P.; Dmitriev, V. A.; Petrov, Yu. V.; Timofeeva, K. A.

Book ID
121588712
Publisher
Springer
Year
2013
Tongue
English
Weight
166 KB
Volume
47
Category
Article
ISSN
1063-7826

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Defects induced by high-energy electrons in Si-SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si-SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created