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Development of AlN/diamond heterojunction field effect transistors

✍ Scribed by Imura, Masataka; Hayakawa, Ryoma; Ohsato, Hirotaka; Watanabe, Eiichiro; Tsuya, Daiju; Nagata, Takahiro; Liao, Meiyong; Koide, Yasuo; Yamamoto, Jun-ichi; Ban, Kazuhito; Iwaya, Motoaki; Amano, Hiroshi

Book ID
125473222
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
603 KB
Volume
24
Category
Article
ISSN
0925-9635

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## Abstract On the basis of RF characteristics and measured small‐signal parameters, an equivalent circuit model was formulated and characterized for metal‐semiconductor field effect transistors based on H‐terminated polycrystalline diamond. Starting from on‐wafer measurements, a bias‐dependent tra