Development of a locally-electron-heated plasma source for HDP-CVD process

✍ Scribed by H. Seki; Y. Ueno; S. Ichimura; S. Takemori; S. Uchikawa; H. Murakamia; S. Okada; Y. Mochizuki; E. Setoyama

• Book ID: 104266164
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 309 KB
• Volume: 51
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00278-4

✦ Synopsis

A new ECR plasma source has been developed. ECR regions are produced locally by permanent magnets placed around the chamber. Microwaves enter the chamber through the side. Electrons are produced and heated in the local ECR regions near the microwave ports. The high energy electrons diffuse into the chamber where a cusp magnetic field is formed. Plasma produced by the high energy electrons is confined in the cusp magnetic field. Uniform high density plasma has been produced over a large area. In order to check the performance of the plasma source, it has been applied to the SiO 2 deposition process. Uniform and rapid SiO 2 film formation has been achieved for 200 mm-diameter wafers.