Determination of x in Hg1−xZnxTe single crystals by the temperature coefficient of the energy gap
✍ Scribed by Jeon, H. W. ;Kim, K. M. ;Kim, H. K. ;Park, H. L. ;Chung, C. H.
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 103 KB
- Volume
- 108
- Category
- Article
- ISSN
- 0031-8965
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Hgj\_x\_yCdxMnyTe crystals in the open-gap region have been successfully grown by the LPE method from a Hg-rich solution. In these crystals, magnetic quantum oscillations due to the magnetophonon resonance and due to the Auger recombination process have been observed. In both oscillations, the tempe
The single crystal was grown by the TSFZ method, and the in-plane and c-axis conductivities were determined as functions of temperature and oxygen partial pressure. Arrhenius plots for in-plane and c-axis conductivity in the intrinsic region fall on straight lines. The in-plane mobility calculated b