Determination of the CT gap of a Nd2CuO4-δ single crystal by high-temperature conductivity measurement

✍ Scribed by Hiroya Ishizuka; Yasushi Idemoto; Kazuo Fueki

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 613 KB
• Volume: 209
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/0921-4534(93)90565-8

✦ Synopsis

The single crystal was grown by the TSFZ method, and the in-plane and c-axis conductivities were determined as functions of temperature and oxygen partial pressure. Arrhenius plots for in-plane and c-axis conductivity in the intrinsic region fall on straight lines. The in-plane mobility calculated by the combination of conductivity with oxygen nonstoichiometry was nearly independent of temperature and was regarded as 1.33 cm* V-' s-i. Assuming the temperature independence of the mobility, the CT gap was determined from the slope of the Arrhenius plot for conductivity. The CT gaps in the a&plane and along the c-axis were found to be 1.2 1 and 1.22 eV, respectively. It was concluded that the same band contributes to conduction along the c-axis and in the abplane.