Determination of the thermal properties of semiconductors using the photothermal method in the many thin layers case

✍ Scribed by F. Saadallah; N. Yacoubi; A. Hfaiedh

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 280 KB
• Volume: 6
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/0925-3467(96)00019-5

✦ Synopsis

The photothermal method has been used in order to determine the thermal properties of semiconductors. In this work, a simple expression for the periodic temperature, at the sample's surface, which is valuable for a number of layers deposited on a substrate, was introduced. This expression showed a very good agreement with data obtained using the GaAsSb/GaAs and InP/GalnAs/InP heterostructures, when the sum of the thicknesses of all the layers is much smaller than the thickness of the substrate. This condition is often satisfied when dealing with semiconductors used in microoptoelectronics.