๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Determination of the surface barrier height by combined measurements of surface photovoltage and field effect

โœ Scribed by J. Shappir

Book ID
118980085
Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
371 KB
Volume
26
Category
Article
ISSN
0039-6028

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Evolution of electronically active defec
Evolution of electronically active defects during the formation of SiSiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements
โœ H. Angermann; W. Henrion; M. Rebien; K. Kliefoth; D. Fischer; J.-T. Zettler ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 307 KB

The evolution of dangling bond defects on initially H-terminated Si(111) surfaces was correlated to the wet-chemical oxide growth on an atomic scale. The dangling bond induced distribution of interface states was monitored by surface photovoltage measurements. Spectroscopic ellipsometry was used for