𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Determination of the size of vacancy-type defects in angstrom ranges by positron annihilation spectroscopy

✍ Scribed by V. I. Grafutin; I. N. Meshkov; E. P. Prokop’ev; N. O. Khmelevskii; S. L. Yakovenko


Book ID
110215489
Publisher
Springer
Year
2011
Tongue
English
Weight
321 KB
Volume
40
Category
Article
ISSN
1063-7397

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Identification of vacancy-type defects i
✍ Hamid, A. S. ;Shaban, H. ;Mansour, B. A. ;Uedono, A. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 185 KB

## Abstract The species of defects in Mg~0.5~Zn~0.5~Te, Li‐doped and P‐doped ZnTe samples were investigated by using positron‐based experiments. The positron lifetime experiments along with the atomic superposition (AT‐SUP) method were used to predict the positron trapping centers in the samples. T

The formation and evolution of vacancy-t
✍ B.S. Li; C.H. Zhang; Y.R. Zhong; D.N. Wang; L.H. Zhou; Y.T. Yang; H.H. Zhang; L. 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 254 KB

The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi