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Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

โœ Scribed by A. Chawanda; K.T. Roro; F.D. Auret; W. Mtangi; C. Nyamhere; J. Nel; L. Leach


Book ID
113810379
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
480 KB
Volume
13
Category
Article
ISSN
1369-8001

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Experimental determination of the latera
โœ M. SaฤŸlam; F.E. Cimilli; A. Tรผrรผt ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 279 KB

We have computed the homogeneous barrier height (BH) of Au/n-Si Schottky diodes (SDs). Thereby, Au/n-Si/Au-Sb SDs (24 dots) have identically been prepared, and the effective BHs and ideality factors of these diodes have been calculated from their experimental forward bias current-voltage (I2V ) and