Determination of the heat capacity of CMOS layers for optimal CMOS sensor design

✍ Scribed by Martin von Arx; Oliver Paul; Henry Baltes

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 341 KB
• Volume: 47
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(94)00935-b

✦ Synopsis

Static and dynamic electrical characterizations of heated microbridges are used to determine the thermophysical thin-film properties of a commercial CMOS IC process. The polysilicon layer and the passivation sandwich exhibit thermal conductivities of (28 \pm 3.5) and (1.48 \pm 0.15 \mathrm{~W} / \mathrm{m} \mathrm{K}), respectively. (\mathrm{The}^{\mathrm{SiO}_{2}}) and passivation sandwiches have volumetric heat capacities of ((1.05 \pm 0.1) \times 10^{6}) and ((2.7 \pm 0.25) \times 10^{6} \mathrm{~J} / \mathrm{m}^{3} \mathrm{~K}).