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The design of integrated 0.13-μm CMOS receiver for ultra-wideband systems

✍ Scribed by Bonghyuk Park; Kwangchun Lee; Sangsung Choi; Songcheol Hong

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 283 KB
Volume: 52
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.25083

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✦ Synopsis

Abstract

A fully integrated 0.13‐μm CMOS receiver for ultra‐wideband systems is implemented. This receiver enables eight bands of operation covering 3.1–9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct‐conversion receiver chain and required noise figure, is discussed. The average conversion gain and input P1dB are 67.3 dB and −25.4 dBm, respectively. The shunt‐series feedback low‐noise amplifier provides a receiver front‐end noise figure of 7.1–9.5 dB over the entire band. The mixer, based on a folded‐cascode topology, also implements a four‐stage programmable gain amplifier. A fabricated die has been bonded and molded onto PCB for characterization. The receiver chip dissipates 48 mA from 1.2 V power supply. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:841–845, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25083

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