## Abstract It has been proved that the dependence of the growth rate __V__ of a LPE GaAs layer on the relative supersaturation σ of the solution at the interphase boundary can be determined on the basis of growth rate measurements of this layer in the case when crystallization is controlled by the
Determination of the growth mechanism of overlayers on solid surfaces: a method based on combined XPS and LEIS measurements
✍ Scribed by Ugo Bardi
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 438 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0169-4332
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