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Determination of size and concentration of critical clusters of silicon carbide in the vapour phase in homogeneous nucleation process

โœ Scribed by S.K. Lilov; Yu.M. Tairov; V.F. Tsvetkov

Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
232 KB
Volume
29
Category
Article
ISSN
0038-1098

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Study of the evaporation mechanism in si
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โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 252 KB ๐Ÿ‘ 2 views

Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place