Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In
Determination of Kinetic Parameters of Bi2Se3 Thin Films by Computation
β Scribed by D. Nataraj; K. Prabakar; Sa.K. Narayandass; D. Mangalaraj
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 139 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0232-1300
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A chemical deposition method for fabrication of Cu 3 Se 2 and CuSe thin 5lms is presented. The 5lms: growth is based on the decomposition of selenosulfate in alkaline solution containing a copper(II) salt and a suitable complexing agent. The deposited materials were identi5ed by X-ray di4raction. In