Chemical Deposition and Characterization of Cu3Se2 and CuSe Thin Films

✍ Scribed by Biljana Pejova; Ivan Grozdanov

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 248 KB
• Volume: 158
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.2000.9055

✦ Synopsis

A chemical deposition method for fabrication of Cu 3 Se 2 and CuSe thin 5lms is presented. The 5lms: growth is based on the decomposition of selenosulfate in alkaline solution containing a copper(II) salt and a suitable complexing agent. The deposited materials were identi5ed by X-ray di4raction. In addition, optical investigations were performed. The absorption onset in the optical spectra of the annealed Cu 3 Se 2 5lms showed a slight red shift (compared to the as-deposited ones), indicating a very slight increase in the average crystal size. The optical (direct) band gap energy of Cu 3 Se 2 thin 5lms is 2.37 eV, while the CuSe thin 5lms are characterized with two direct band gap energies of 2.0 and 2.8 eV. The average crystal size values, calculated on the basis of the recorded XRD patterns, are approximately 40 nm for both Cu 3 Se 2 and CuSe thin 5lms.