## Abstract A simple, robust, accurate method to extract the thermal resistance of BJT/HBT devices is proposed, which only needs the measured device DC IβV characteristics at room temperature. No optimization is needed to extract the thermal resistance. The proposed method is verified using a varie
β¦ LIBER β¦
Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement
β Scribed by Woong Joon Hwang; Tae Hee Lee; Lan Kim; Moo Whan Shin
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 117 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
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