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Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs

✍ Scribed by Pengfei Tian; Zhizhong Chen; Yongjian Sun; Shengli Qi; Huizhen Zhang; Junjing Deng; Feng Yu; Tongjun Yu; Xiangning Kang; Zhixin Qin; Guoyi Zhang


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
671 KB
Volume
175
Category
Article
ISSN
0921-5107

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