✦ LIBER ✦

Determination of doping effects on Si and GaAs bulk samples properties by photothermal investigations

✍ Scribed by Sameh Abroug; Faycel Saadallah; Noureddine Yacoubi

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 255 KB
Volume: 400
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2007.07.003

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of electrical and optother

Investigation of electrical and optothermal properties of Si-doped GaSb epitaxial layers by the Hall effect, PL measurement and photothermal deflection spectroscopy

✍ S. Abroug; F. Saadallah; F. Genty; N. Yacoubi 📂 Article 📅 2009 🏛 Elsevier 🌐 English ⚖ 502 KB

Effects of deep levels and Si-doping on

Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods

✍ Q. Liu; U. Quedeweit; F. Scheffer; A. Lindner; W. Prost; F.J. Tegude 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 311 KB

Deep level characteristics in undoped and Si-doped Ga05tIn049P layers has been investigated using photocapacitance and photoluminescence (PL) methods. Ga0.5~In049P layers were grown by metalorganic vapor-phase epitaxy in the temperature range 600-730 °C and with doping levels from 3.9 x l0 w cm -~ t

Optical properties of undoped, Be-doped,

Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy

✍ Soo-Ghang Ihn; Mee-Yi Ryu; Jong-In Song 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 881 KB

The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi

Electrical properties and dopant incorpo

Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE

✍ Y. Kadoya; A. Sato; H. Kano; H. Sakaki 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 367 KB

Effect of VIII ratio on the electrical a

Effect of VIII ratio on the electrical and optical properties of Si-doped AlGaInP grown by metalorganic chemical vapor deposition

✍ Qingxuan Yu; Peng Raiwu; Li Cuiyun 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 238 KB

Effects of As cell temperature on oval d

Effects of As cell temperature on oval defect density and C acceptor concentration of light Si-doped GaAs grown by molecular beam epitaxy

✍ C.Y. Li; D.H. Zhang 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 280 KB