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Determination of depth-profiles in surface layers of solids by angular resolved X-ray photoelectron spectroscopy

✍ Scribed by O. A. Baschenko; M. A. Tyzykhov; V. I. Nefedov

Book ID
112291263
Publisher
Springer
Year
1991
Tongue
English
Weight
352 KB
Volume
341
Category
Article
ISSN
1618-2650

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## Silicon with thermally-grown oxide overlayers m the thickness range IS-89 A IS studied by angulardcpendent XPS. Electron attenuation lengths at 1382 eV are found to be 37 +-4 A in SiOz and 27 +-6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.