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Determination of deep centers in silicon by thermally stimulated conductivity measurements

✍ Scribed by H. Schade; D. Herrick

Publisher
Elsevier Science
Year
1969
Tongue
English
Weight
209 KB
Volume
12
Category
Article
ISSN
0038-1101

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Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements
✍ T. Yildirim; N. M. Gasanly πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 233 KB

## Abstract Thermally stimulated current measurements were carried out on as‐grown AgIn~5~S~8~ single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 Ks^–1^. The analysis of the data revealed the electron trap level located at 5 meV. The