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Determination of boron and phosphorus concentration in silicon by photoluminescence analysis

✍ Scribed by Tajima, Michio

Book ID: 120580354
Publisher: American Institute of Physics
Year: 1978
Tongue: English
Weight: 483 KB
Volume: 32
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.89897

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## Abstract We studied the simultaneous phosphorus and boron diffusion gettering (BDG) of iron in silicon by physical modeling. We present improvements to the previously used models for BDG and phosphorus diffusion gettering (PDG). We show that the improved model is suitable for analyzing the gette