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Determination of barrier height and technological parameters of triangular barrier diodes

✍ Scribed by Chilana, G. S. ;Gupta, R. S.


Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
312 KB
Volume
100
Category
Article
ISSN
0031-8965

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We have computed the homogeneous barrier height (BH) of Au/n-Si Schottky diodes (SDs). Thereby, Au/n-Si/Au-Sb SDs (24 dots) have identically been prepared, and the effective BHs and ideality factors of these diodes have been calculated from their experimental forward bias current-voltage (I2V ) and