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Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateralC-Vmeasurement

✍ Scribed by A. É. Atamuratov; D. U. Matrasulov; P. K. Khabibullaev

Book ID: 110206797
Publisher: SP MAIK Nauka/Interperiodica
Year: 2007
Tongue: English
Weight: 192 KB
Volume: 52
Category: Article
ISSN: 1028-3358
DOI: 10.1134/s1028335807060080

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