An InAlAs/InGaAs metal-oxide-semiconductor field effect transistor using the native oxide of InAlAs as a gate insulation layer

✍ Scribed by P. A. Grudowski; R. V. Chelakara; R. D. Dupuis

• Book ID: 125524607
• Publisher: American Institute of Physics
• Year: 1996
• Tongue: English
• Weight: 251 KB
• Volume: 69
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.118070