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Design and fabrication of Si/SiGe PMOSFETs

✍ Scribed by Peifeng Yang; Jingchun Li; Qi Yu; Xiangzhan Wang; Mohua Yang; Lin He; Kaicheng Li; Kaizhou Tan; Daoguang Liu; Jing Zhang; Qiang Yi; Zerui Fan

Book ID
107502340
Publisher
SP Science Press
Year
2002
Tongue
English
Weight
325 KB
Volume
19
Category
Article
ISSN
0217-9822

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A new hole surface scattering model for FBMC simulations is presented for unstrained Si and biaxially strained Si/SiGe PMOSFETs. The new scattering model was developed for quantum corrected spatial hole charge distributions at the Si/SiO 2 interface, where the quantum correction is based on the impr