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Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate

✍ Scribed by Wen-Shan Lee; Kuan-Wei Chu; Chih-Fang Huang; Lurng-Shehng Lee; Min-Jinn Tsai; Kung-Yen Lee; Feng Zhao

No coin nor oath required. For personal study only.

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3510-V 390-$\hbox{m}\Omega\cdot\hbox{cm}

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