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[IEEE 1999 57th Annual Device Research Conference Digest - Santa Barbara, CA, USA (28-30 June 1999)] 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) - Progress in SiC and GaN microwave devices fabricated on semi-insulating 4H-SiC substrates

✍ Scribed by Palmour, J.W.; Allen, S.T.; Sheppard, S.T.; Pribble, W.L.; Sadler, R.A.; Alcorn, T.S.; Ring, Z.; Carter, C.H.

No coin nor oath required. For personal study only.

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