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Depth profiling of tritium in a thin titanium layer bombarded with deuterium ions

✍ Scribed by S. Okuda; R. Taniguchi; M. Fujishiro; Y. Satoh; E. Hiraoka


Book ID
107809814
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
552 KB
Volume
128-129
Category
Article
ISSN
0022-3115

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## Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub‐nanometer resolution and high strain sensitivity that the thin Si cap