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Depth profiles of boron in IPI amorphous silicon films with (p, α) resonance reaction

✍ Scribed by Liao Changgeng; Zheng Zhilao; Wang Yongqiang; Jiang Bianying


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
193 KB
Volume
42
Category
Article
ISSN
0042-207X

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Depth profiling of nitrogen using 429&#x
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Resonances at 429 keV and 897 keV in the 15 N(p, ac) 12 C reaction were investigated for depth profiling nitrogen in materials containing nitrogen isotopes in natural abundances. Both resonances exhibit identical sensitivity, however the resonance at 897 keV is prone to interferences from light elem